Researchers of the Korea Institute of Science and Technology (KIST) develop a new material for blue light emitting LEDs which can replace gallium nitride (GaN). According to the report of BusinessKorea, the new technology breakthrough might enable Korea to reduce the dependence of Japan on LED materials.
Published on Scientific Report on March 04, 2020, the study titled “Intrinsically p-type cuprous iodide semiconductor for hybrid light emitting diodes,” demonstrate the single crystal epitaxy of cuprous iodide (CuI) film grown on Si and sapphire substrate by molecular beam epitaxy.
(Image: KIST)
The researchers managed to grow CuI semiconductors on large size Si substrate (300mm) with few defects. They also found that the blue light emitting by CuI semiconductors is 10 times brighter than GaN-based LED. In addition, higher photoelectric efficiency and longer stability was also featured.
The finding of the new semiconductor material for LED is significant for businesses in Korea. As the research team claimed that CuI can replace GaN in producing blue LED, businesses in Korea would be able to lessen their dependence on Japan’s exclusive GaN.
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