2 µm Full-color Micro-LED Chips Achieved! NPQD® technology is now commercialized

Traditional color conversion technologies including QD printing and QD lithography can hardly meet the requirements because of the large printing line width, low conversion efficiency, high QD-film thickness, and poor reliability. Utilizing the patented NPQD^® technology, Saphlux team created a nanoporous GaN layer inside micro-LED epi-wafer as a natural vessel for quantum dots to be selectively loaded in. A 2 µm full-color micro-LED array was then fabricated and lit up to prove the feasibility.

NPQD^® color conversion technology

Moreover, conventional AlInGaP based red micro-LED suffers from severe efficiency loss as the chip size shrinks because of the high defect density and poor light extraction. This problem is now addressed by converting the high-efficiency blue micro-LEDs into red through NPQD^®. The optimized nanoporous GaN provides a strong scattering effect which increases the effective light path by 8 times and the emitting area by 40 times. With that,  a 99.99% light conversion efficiency can now be achieved with a merely 5 µm layer.

EQE comparison between NPQD^® and AlInGap micro-LEDs

Saphlux also announced today that the company has started the production of NPQD^® R1 and T1 micro-LED chips for fine-pitch display customers, who have qualified these chips on their display products and are now entering into the delivery phase. This proves the maturity of the NPQD^® technology – a breakthrough in lab research finally evolves into a commercial product.

NPQD^® Micro-LED fine-pitch display